National Aeronautics and Space Administration (NASA)
Location
Pasadena, CA | United States
Job description
Description
The next generation Tunable Diode Laser (TLD) absorption spectrometers, should be compact, low-power consumption, and low-cost for deployment in many future Earth and planetary missions. Such capability is of particular interest for future mission opportunities for Mars, Venus, Jupiter, Europa, and their moons for the detection of biogenic gases and their isotope ratios. The key enabler for realization of such an instrument is the availability of semiconductor lasers at specific wavelengths coinciding with the absorption band of the gases of interest.
The Advanced Microfabrication and Optoelectronics Group at JPL is accepting applications at the post doctorial level to design, fabricate, and characterize advanced semiconductor lasers for application is spectroscopy and LIDAR. For spectroscopy low power consumption room temperature 4-10 micron quantum cascade lasers are currently being developed. For LIDAR applications extremely stable frequency, narrow line width optically or electrically pumped semiconductor lasers in the 2.0-3.0 um wavelength are needed.
Knowledge and experience in infrared quantum cascade laser design, fabrication, including knowledge and experience in the fabrication of single mode semiconductor lasers are required. The candidate will work within a small team developing laser diodes in the 2.0-3.0 micron range and low power consumption quantum cascade laser in the 4.0- 10.0 micron wavelength.
Location:Applications with citizens from Designated Countries will not be accepted at this time, unless they are Legal Permanent Residents of the United States. A complete list of Designated Countries can be found at: .
Eligibility is currently open to:
Eligibility Requirements
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